@Article{GilBonSanTraCor:2008:AdAmHy,
author = "Gil, Capote and Bonetti, Luis Fernando and Santos, L{\'u}cia
Vieira and Trava Airoldi, Vladimir Jesus and Corat, Evaldo
Jos{\'e}",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais
(INPE)}",
title = "Adherent amorphous hydrogenated carbon films on metals deposited
by plasma enhanced chemical vapor deposition",
journal = "Thin Solid Films",
year = "2008",
volume = "516",
number = "12",
pages = "4011--4017",
month = "Apr.",
keywords = "amorphous hydrogenated carbon, plasma enhanced chemical vapor
deposition, silicon interlayer, adhesion, X-ray photoelectron
spectra, mechanical properties.",
abstract = "This paper reports the findings of a study of the structural,
mechanical, and tribological properties of amorphous hydrogenated
carbon (a-C:H) coatings for industrial applications. These thin
films have proven quite advantageous in many tribological
applications, but for others, thicker films are required. In this
study, in order to overcome the high residual stress and low
adherence of a-C:H films on metal substrates, a thin amorphous
silicon interlayer was deposited as an interface. Amorphous
silicon and a-C:H films were grown by using a radio frequency
plasma enhanced chemical vapor deposition system at 13.56 MHz in
silane and methane atmospheres, respectively. The X-ray
photoelectron spectroscopy technique was employed to analyze the
chemical bonding within the interfaces. The chemical composition
and atomic density of the a-C:H films were determined by ion beam
analysis. The film microstructure was studied by means of Raman
scattering spectroscopy. The total stress was determined through
the measurement of the substrate curvature, using a profilometer,
while micro-indentation experiments helped determine the films'
hardness. The friction coefficient and critical load were
evaluated by using a tribometer. The results showed that the use
of the amorphous silicon interlayer improved the a-C:H film
deposition onto metal substrates, producing good adhesion, low
compressive stress, and a high degree of hardness. SiC was
observed in the interface between the amorphous silicon and a-C:H
films. The composition, the microstructure, the mechanical and
tribological properties of the films were strongly dependent on
the self-bias voltages. The tests confirmed the importance of the
intensity of ion bombardment during film growth on the mechanical
and tribological properties of the films. (c) 2007 Elsevier B.V.
All rights reserved.",
doi = "10.1016/j.tsf.2007.08.007",
url = "http://dx.doi.org/10.1016/j.tsf.2007.08.007",
issn = "0040-6090",
language = "en",
targetfile = "adherent amorphous.pdf",
urlaccessdate = "02 maio 2024"
}